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2nd Edition of International Conference on

Materials Science and Engineering

March 28 -30, 2022 | Singapore

2022 Speakers

Significant effect of film thickness on morphology and third-order optical nonlinearities of Cd1-xZnxO semiconductor nanostructures for optoelectronics

Raghavendra Bairy, Speaker at Speaker at Materials Conferences: Raghavendra Bairy
NMAM Institute of Technology Nitte, India
Title : Significant effect of film thickness on morphology and third-order optical nonlinearities of Cd1-xZnxO semiconductor nanostructures for optoelectronics

Abstract:

The work presented here reported the thickness dependent structural, linear and nonlinear optical
properties of nanostructured Cd1-xZnxO thin films. Thin films are prepared with two different thickness (≈
0.5μm and 1μm) by employing a spray pyrolysis (SP) technique for different Zn-doping levels (Cd1-xZnxO
with the x value of 0.00, 0.01, 0.05 and 0.1). X-ray diffraction studies confirm the polycrystalline nature
having a cubic crystal structure. In terms of aspect ratio of the columnar structure and dispersion in
hexagonal (1 1 1) basal plane orientation, a thickness dependency of structural evolution was discussed.
The Scherrer rule was employed to determine the crystallite size and found to be decreased. FESEM images
indicate grains which are uniform and grain size were slightly increases with an increase in dopant
concentration, annealing and thickness of the films respectively. The optical energy band gap (Eg) of the
prepared films was found to be increased from 2.50 eV to 2.63 eV. The NLO parameters of the samples
were measured from the Z-scan data under DPSS continuous wave laser excitation at 532 nm and the results
reveal that reverse saturable absorption (RSA) and self-defocusing nature are the attributed and observed
nonlinearity of the nanostructures. The third-order NLO components such as β, and χ(3) are found to be
enhanced with one order of magnitude higher with the influence of thickness from 1.25 x10-4 to 2.47 x10-3
(cmW-1), 7.08 x10-9 to 3.35 x10-8 (cm2W-1) and 4.06 x 10-7 to 1.96 x10-6 (esu) respectively. The inspiring
results of NLO parameters are also due to the increasing localized defect states on grain boundaries as the
film thickness increases suggests the prepared films are a promising material for nonlinear photonic device
applications.
Keywords: Cd1-xZnxO semiconductor thin films; Thickness; Band-gap; Spray Pyrolysis; NLO; Z-scan.

Biography:

Dr. Raghavendra Bairy studied M.Sc. Physics at the Mangalore University, and Pursued Ph.D. in Physics from Visvesvaraya Technological University (V.T.U.) Belagavi, Karnataka state India. He then joined the research group of Prof. Dr. G K Shivakumar at the NMAM Institute of Technology Nitte, Karnataka. He received his PhD degree in 2019 at the same institution under VTU Belagavi. He has published more than 25 research articles in SCI(E) journals and also reviewed more than 50 technical papers for SCI(E) journals.

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