Title : Material Growth, Characterization of Group IV, III-V & II-VI Semiconductors and its Use for Various Device Applications
Abstract:
The state-of-the-art in studying material growth & characterization of conventional and nano-electronic devices through purely atomistic methods in form of family of innovative TNL TCAD software has been reported. The significance of using full flow of TNL TCAD suite especially for advanced node technologies in real time device fabrication have been elaborated in details.
1.Introduction
A real time lattice based epitaxial growth technique for group IV, IV-IV, II-VI and III-V compounds based on MBE, CVD & MOCVD reactor’s input conditions using EpiGrow simulator with self-assembly of adatoms allow any kind of structure to be grown on appropriate substrate. The full electronic band structure can be obtained by FullBand simulator for better understanding of the structural and electronic properties of the thin film. The carrier transport properties can be estimated with multiple appropriate scattering mechanisms and Monte Carlo technique associated used for the Boltzmann Transport Equation (BTE), ElecMob simulator. The scattering processes acoustic, intervalley, optical (Polar), piezoelectric, ionized impurity, Coulomb, surface roughness etc are inbuilt feature. The semiconductor device technologies characterization through TNL’s Monte Carlo Particle Device (MCPD) simulator enable for better insight of the device technology. The difference in TNL TCAD software with the conventional TCAD is attributed to obtain optimum conditions for material growth, band structures with physical parameters and estimation of accurate electron mobility based on different scattering mechanisms with accurate I-V characterization.
2.Benefits using Family of TNL Simulators
All TNL simulators are interfaced with each other whereas having capabilities to work in standalone mode. Users have flexibilities to calibrate the simulated output results with the experimental result at each step of simulation as per the TNL simulators flow depicted below.
What will audience learn from your presentation?
- Explain how the audience will be able to use what they learn?
- Material growth and characterization at atomistic scale with device characterization and modeling capabilities with more insights.
- How will this help the audience in their job? Is this research that other faculty could use to expand their research or teaching? Does this provide a practical solution to a problem that could simplify or make a designer’s job more efficient? Will it improve the accuracy of a design, or provide new information to assist in a design problem? List all other benefits.
- Yes, the atomistic scale modeling for material growth and characterization and device applications can enhance the physics based knowledge about semiconductor technologies which will be helpful for research and teaching. For more benefits visit: www.technextlab.com
