Title : Thin films of oxides by Atomic Layer Deposition – new applications
Technology of Atomic Layer Deposition (ALD) allows to grow thin films (from a few nm to few hundred nm) of wide band gap oxides (ZnO, Al2O3, ZrO2, HfO2, TiO2) with excellent structural, mechanical, optical and electrical properties. At present such films found range of applications – as gate oxides in Silicon-based field effect transistors (HfO2), as transparent electrodes (ZnO, ZnO:Al (AZO), Zno:Ga (GZO)) in photovoltaics, as anti-reflection layers (Al2O3) in optical and photovoltaic devices or as barrier layers (Al2O3, TiO2) in organic-based devices. Advantageous properties of ALD-deposited high-k will first be discussed. Then, quite new applications of these films in biology and medicine will be demonstrated. The same films, which were investigated by us for electronic, optoelectronic and photovoltaic applications, show bio-activities (e.g. anti-bacterial activity). This allows range of new applications in biology, medicine or food industry. Importantly, the ALD technology allows coating of temperature sensitive substrates can be coated, such as many of materials used in hospitals or in food industry. Coating of hospitals equipment and implants was tested by us.
New applications of wide band gap oxides in biology, medicine and/or food industry will be demonstrated. It will be discussed how the ALD technology may solve many of critical problems of our society. This includes new solutions for:
a) green energy sources,
b) anti-bacterial protection,
c) production of new generation of implants.