Title : Study of XRD analysis of CsPbBr3 perovskite thin films obtained by single source chemical vapor deposition method
Abstract:
Inorganic lead halide perovskite layers have become a promising photoactive material for thin-film devices in various fields of optoelectronics due to their unique optoelectronic properties. The transition of perovskite devices from the laboratory to the production field requires the full adaptation of the technological methods for obtaining perovskite layers to industrial production standards. However, high-performance perovskite-based devices have been obtained using solvent-based technological methods, which limit their large-scale production in industry [1]. These methods provide precise morphological control of organic perovskite-based devices in laboratory-scale processes, but the production of high-performance, low-yield perovskite-based optoelectronic devices on an industrial scale requires solvent-free methods for obtaining inorganic perovskite layers [2]. This is because the low solubility of inorganic halide precursors such as CsBr hinders the use of solution processes for preparing inorganic perovskites, leading to uneven layers and limited control over thickness [3]. Single source chemical vapor deposition method allows for the controlled growth of inorganic perovskite layers with a wide range of composition ratios.
In this work, we synthesized inorganic perovskite thin films using a single source chemical vapor deposition method and studied their crystal structure using X-ray diffraction (XRD). Perovskite layers were grown on glass substrates. Before the growth process, an ultrasonic bath was used to clean the glass substrates from various contaminants, which were cleaned in three consecutive steps of 13 minutes each. Three substances were used in these steps, namely acetone, deionized water, and isopropyl alcohol. After the substrate cleaning processes were completed by drying in a nitrogen stream, the glass substrates were placed in a vacuum thermal spraying device. CsBr and PbBr2 compounds with 99.999% purity in a 50:50 ratio were placed in the thermal source. The process of depositing the perovskite layer begins with a gradual increase in the heater temperature until sublimation begins and reaches 400 ℃. Molecules sublimated from the sources condense on the surface of the substrate heated to 200 ℃., forming a thin layer.
