Title : Anisotropic In(Zn)P-based nanocrystals with high photoluminescence quantum yield and broadband for near-infrared LEDs
Abstract:
Near-infrared (NIR) light exhibits distinct advantages, such as non-destructive interaction and deep tissue penetration, making it particularly suitable for real-time, non-invasive diagnostic applications. NIR light emitting diodes (LEDs) have increasingly become attractive candidates for integration into compact devices. In this study, In(Zn)P/CdSe/CdS/ZnS core/shell/multi-shell anisotropic heterostructured nanocrystals (AH-NCs) were synthesized with high photoluminescence quantum yield of 72%, broadband NIR-I to NIR-II emission spectrum (700 nm to 1400 nm), and emission bandwidth (full-width at half-maximum) of 210nm. Furthermore, the AH-NCs mixed silicone integrated with blue flip-chip LEDs to fabricate down-conversion NIR AH-NC-LEDs, yielding an NIR optical output power of 21 mW under driving current of 100 mA, and a photoelectric efficiency of 38.4%. These multicomponent AH-NCs show significant potential for advancing NIR optoelectronic device technologies.
