Title : Effect of gamma-radiation on optical properties of thin films а-si1-xgex:h for solar cells
Abstract:
This article analyzes the possibility of using the technology of plasma chemical deposition of films a-Si1-xGex:H (x=0÷1), unalloyed and doped PH3 and B2H6 in order to use them in p-i-n structures of solar cells. Optical properties were also determined, as well as the hydrogen content in this film. It was found that the properties of the film strongly depend on the composition and the level of hydrogenation. The concentration of hydrogen atoms in the films was varied by changing the composition of the gas mixture, and IR absorption was measured for a-Si:H and a-Ge:H films. Three-layer solar cells with a cell area of 1.3 cm2 and an efficiency (η) of 9.5% were manufactured on the basis of a-Si:H and a-Si0.88Ge1.2:H films.
