Ajmal Khan

Biography:

M. Ajmal Khan was born in 1970 in the small town of Waziristan, Wana (Pakistan). He received his PhD degree in 2013, from University of Tsukuba, Japan. In 2012, he has discovered the thin film of boron (B) doped p-type BaSi2 layer “p+” along with his PhD supervisor Prof. Takashi Suemasu during his PhD work. From 2014 to 2016, he was appointed as a research scientist in the team of FUTUTER PV-Innovation, Japan Science and Technology Agency (JST), Fukushima Renewable Energy AIST Institute (FREA). In FREA, he worked on Si NWs, SiGe and a-Si/c-Si-based heterojunction solar cells. In 2016, he also worked as associate professor in National Institute of Technology, Fukushima College Iwaki. Later in 2017, he moved to the Professor Hideki Hirayama’s group at CPR Riken as a researcher. Since then, he has been doing research on the growth, fabrication, characterization and device applications of group III-nitride semiconductors (AlGaN, AlN and GaN). Recently he developed low-temperature deposited AlGaN buffer layers underneath the multi quantum well for the growth of group III-nitride semiconductor films on AlN templet on sapphire substrate, which led to the realization of UVB LED with a world record external-quantum-efficiency (EQE) of 9.3% and light outpower of 42mW on bare-wafer condition at 300-304nm emission as well as light outpower of 29mW at 310nm emission for medical and agricultural applications. He is the author and co-author of more than 50 journal publications of the international repute. His main areas of interest are AlGaN/InAlGaN based UVA, UVB, UVC LEDs and laser diodes.